Producing Fullerene (i.e., C60) Type Superconductor Or Analog Thereof Patents (Class 505/460)
-
Patent number: 8211996Abstract: A method for the synthesis of well-defined rod-coil block copolymers consisting of P3HT donor and C60 acceptor chromophores (P3HT-b-P(SxAy)-C60) in a molecular architecture is reported for use in bulk-heterojunction (BHJ) solar cells. In thin films of the resulting block copolymer, reproducible self-assembly into well-defined “nanofibrils” is observed. This is the first example of a block copolymer containing a C60 derivative that shows exclusively a nanofibrilar structure. A substantial improvement in device performance is achieved when the block copolymer is used as a “surfactant” for controlling the interface morphology of the P3HT:PCBM donor-acceptor phase domains within the composite.Type: GrantFiled: November 25, 2009Date of Patent: July 3, 2012Assignee: The Regents of the University of CaliforniaInventors: Changduk Yang, Fred Wudl
-
Patent number: 8092773Abstract: The liquid fullerene derivative according to the present invention contains a fullerene moiety, a benzene ring bonded to the fullerene moiety, and first to third alkyl substituents R1, R2 and R3 bonded to 2-, 4- and 6-positions of the benzene ring, respectively, and the first to third alkyl substituents R1, R2 and R3 each contain at least 12 carbon atoms. The liquid fullerene derivative which is liquid at room temperature without requiring a solvent and easily exhibits the function of the fullerene itself, a method for producing the same, and a device using the same are provided.Type: GrantFiled: July 5, 2007Date of Patent: January 10, 2012Assignee: National Institute for Materials ScienceInventors: Takashi Nakanishi, Tsuyoshi Michinobu, Jonathan P. Hill, Katsuhiko Ariga
-
Patent number: 7189681Abstract: For provides a superconducting material comprising highly chemically stable Fullerene carbon molecules having a relatively high transition temperature and high chemical stability, C20 Fullerene molecules having stronger electron-lattice interaction than that of C60 Fullerene molecules are used, in order to polymerize the C20 Fullerene molecules into a one-dimensional chain, C20 is incorporated in a gap of a material having a large band gap between a valence band and a conduction band, thereafter, electrons or positive holes are injected into the obtained C20 Fullerene chain polymer via an electric field application for phase transition to a superconductor.Type: GrantFiled: December 26, 2001Date of Patent: March 13, 2007Assignee: NEC CorporationInventor: Yoshiyuki Miyamoto
-
Patent number: 6835952Abstract: The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction.Type: GrantFiled: March 21, 2003Date of Patent: December 28, 2004Assignee: The Regents of the University of CaliforniaInventors: Vincent Henry Crespi, Marvin Lou Cohen, Steven Gwon Sheng Louie, Alexander Karlwalter Zettl
-
Patent number: 6303760Abstract: A family of trimetallic nitride endohedral metallofullerenes and their preparation are described. The trimetallic nitride endohedral metallofullerenes have the general formula A3-nXn@Cm where n ranges from 0 to 3, A and X may be trivalent metals and may be either rare earth metal or group IIIB metals, and m is between about 60 and about 200. Further, the A3-nXn@C68, A3-nXn@C78, A3-nXn@C80 families of endohedral fullerenes are described. The trimetallic nitride endohedral metallofullerenes are produced by charging a reactor with a cored graphite rod that has been filled with a metal oxide graphite mixture. The metal oxides correspond to the metals for A and X. The graphite rod is arc discharged in a helium and nitrogen atmosphere to produce the desired trimetallic nitride endohedral metallofullerenes.Type: GrantFiled: December 10, 1999Date of Patent: October 16, 2001Assignee: Virginia Tech Intellectual Properties, Inc.Inventors: Harry C. Dorn, Steven A. Stevenson
-
Patent number: 5869626Abstract: A novel metal-encapsulated fullerene compound wherein a side chain is introduced in a metal-encapsulated fullerene is provided.A metal-encapsulated fullerene compound represented by the following structural formula (1) is synthesized by causing a disilirane derivative or digermirane derivative having the following structural formula (2) to react with a metal-encapsulation fullerene so as to add functional groups to the fullerene. ##STR1## Herein, M is an encapsulated metal atom, m is an integer from 1 to 3, n is an even number from 28 to 200, and R is a t-butyl group or an aromatic group having alkyl groups in the 2,6-positions, such as mesityl, 2,6-diethylphenyl or 2,6-dimethylphenyl groups.Type: GrantFiled: February 26, 1996Date of Patent: February 9, 1999Assignee: Doryokuro Kakunenryo Kaihatsu JigyodanInventors: Kazunori Yamamoto, Hideyuki Funasaka, Takeshi Takahashi, Takeshi Akasaka, Tatsuhisa Kato, Shigeru Nagase, Kaoru Kobayashi
-
Patent number: 5763719Abstract: A fullerene derivative of the formula I ##STR1## where the symbols and indices have the following meanings: F is a fullerene radical of the formula (C.sub.20+2m), where m is a number from 1 to 50R.sup.1 to R.sup.8 are identical or different and are each H, CO.sub.2 R.sup.9, CN, COR.sup.10, Cl, Br, I, F, OR.sup.11, C.sub.1 -C.sub.20 -alkyl, phenyl or H, R.sup.1 -R.sup.4 and/or R.sup.5, R.sup.7 can also be part of a cycloalipathic, cycloaromatic or cycloheteroaromatic system which in turn is substituted by C.sub.1 -C.sub.20 -alkyl, aryl, carboxyl, carbonyl, alkoxy, aryloxy, halogen, nitro, alcohol or amine, or R.sup.1 and R.sup.2, R.sup.2 and R.sup.3, R.sup.3 and R.sup.4 can together be ##STR2## where R.sup.15 -R.sup.18 are each H, C.sub.1 -C.sub.20 -alkyl, F, Cl, Br, I or phenyl, andAR is the radical of a fused cyclo-aromatic system, and n is from 1 to 20 and a process for its preparation.Type: GrantFiled: September 15, 1995Date of Patent: June 9, 1998Assignee: Hoechst AGInventors: Andreas Gugel, Pavel Belik, Klaus Mullen
-
Patent number: 5698497Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.Type: GrantFiled: June 13, 1994Date of Patent: December 16, 1997Assignee: Lucent Technologies Inc.Inventors: Robert Cort Haddon, Arthur Foster Hebard, Donald Winslow Murphy, Matthew Jonathan Rosseinsky
-
Patent number: 5637260Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.Type: GrantFiled: June 7, 1995Date of Patent: June 10, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuyuki Okuda, Takashi Uemura, Yoshinobu Ueba, Koji Tada, Kengo Ohkura, Hirokazu Kugai
-
Patent number: 5635455Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.Type: GrantFiled: June 7, 1995Date of Patent: June 3, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Nobuyuki Okuda, Takashi Uemura, Yoshinobu Ueba, Koji Tada, Kengo Ohkura, Hirokazu Kugai
-
Patent number: 5627140Abstract: Enhanced flux pinning in superconductors is achieved by embedding carbon nanotubes into a superconducting matrix. The carbon nanotubes simulate the structure, size and shape of heavy ion induced columnar defects in a superconductor such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x. The nanotubes survive at treatment temperatures of up to approximately 800.degree. C. both in oxygen containing and in inert atmospheres. The superconducting matrix with nanotubes is heat treated at a lower temperature than the temperature used to treat the best case pure superconductor material.Type: GrantFiled: May 19, 1995Date of Patent: May 6, 1997Assignees: NEC Research Institute, Inc., Florida State UniversityInventors: Kristian Fossheim, Thomas W. Ebbesen
-
Patent number: 5561102Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.Type: GrantFiled: December 14, 1994Date of Patent: October 1, 1996Assignee: The Research Foundation of State University of New York at BuffaloInventors: Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
-
Patent number: 5538763Abstract: A carbon cluster film has a precisely controlled stable electrical conductivity which does not deteriorate in a short period of time in air. Such a carbon cluster film having a stable electrical conductivity is formed by introducing an impurity into a thin film of fullerenes by ion implantation. The fullerenes include C.sub.60, C.sub.70 or the like.Type: GrantFiled: December 2, 1994Date of Patent: July 23, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshinobu Ueba, Nobuyuki Okuda, Kengo Ohkura, Hirokazu Kugai
-
Patent number: 5380703Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting-a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.Type: GrantFiled: January 25, 1993Date of Patent: January 10, 1995Assignee: The Research Foundation of State University of New York at BuffaloInventors: Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
-
Patent number: 5348936Abstract: Superconducting, metal-doped fullerenes are provided, along with processes for their preparation in relatively high stoichiometric purity. In one embodiment, the processes provide fullerenes of the formula M.sub.x C.sub.q, where M is a metal, x is greater than 0 but less than about 10, and q is at least 60. The processes comprise contacting C.sub.q with metal in an amount and under reaction conditions effective to produce a compound having the formula M.sub.y C.sub.q, and contacting said M.sub.y C.sub.q with a portion of C.sub.q in an amount and under reaction conditions effective to produce said M.sub.x C.sub.q, wherein y is greater than x.Type: GrantFiled: April 16, 1993Date of Patent: September 20, 1994Assignee: The Trustees of the University of PennsylvaniaInventors: John P. McCauley, Jr., Qing Zhu, Gavin Vaughan, Nicole Coustel
-
Patent number: 5332723Abstract: A method of producing a new high Tc superconducting material using fullerene molecules as artificial pinning sites for any magnetic flux that may enter the material.Type: GrantFiled: July 28, 1993Date of Patent: July 26, 1994Assignee: The United States of America as represented by the Secretary of the NavyInventors: Walter Eidelloth, deceased, James T. Busch, heir, Richard J. Gambino, Rodney Ruoff, Claudia D. Tesche