Abstract: A cable telephony system (100) including a plurality of subscriber units (142) connected to a cable control unit (102) by a cable distribution network (106) in which the cable control unit (102) detects events associated with connections occurring in the cable telephony system. Information describing these events is placed into connection event reports and sent to a traffic analysis and planning system (116) as the events are detected by the cable control unit (102). These reports are used to manage the cable telephony system (100).

Abstract: An improved edge termination scheme for semiconductor structures includes field-limiting rings (13, 14 and 15) having a fine-to-coarse incrementing scheme (18, 19 and 20) which is spatially additive assuring constancy against lateral junction variation. This spatially increasing scheme greatly enhances breakdown voltage characteristics. Additionally, redundant rings (14) are used to further guarantee insensitivity of the device to manufacturing variations. Reverse floating polysilicon flaps (28, 29 and 30) may be included to aid surface stability, when exposure to stray surface charges is anticipated. Additionally, this scheme provides for easy voltage scalability.

Abstract: A high performance, high voltage non-epi bipolar transistor including a substrate (12) with an n-type conductivity well (13) and an insulative layer (14) with first (15), second (17) and third (18) openings exposing the substrate in the well. A first p-type volume (19) surrounding the first and second openings (15, 17) beneath the insulative layer (14), and a second n-type volume (22) surrounding the third opening (18) beneath the insulative layer (14). A p-type intrinsic base (25) in the first opening (15) and in contact with the first volume (19). A p-type extrinsic base (30) in the second opening (17) and in contact with the first volume (19). An n-type collector (32) in the third opening (18) and in contact with the second volume (22), and an n-type emitter layer (27) in the first opening in overlying contact with the intrinsic base (25).

Abstract: An apparatus for testing electronic devices in hostile media includes an isolation tank (24) which contains an inert or relatively inert material (26) such as fluorinated hydrocarbon liquid. Within the isolation tank (24) submersed in the inert or relatively inert material (26), is at least one test chamber (12) containing hostile and/or volatile test medium (14) such as a fuel mixture. Adjacent to the test chamber (12) and also within isolation tank (24) is a loading chamber (30) via which electronic devices to be tested are coupled to the test tank (12). The loading chamber (30), test tank (12) and isolation tank (24) are all isolated from the ambient environment and are oxygen free because they each contain a gas purge lines (33,35,38) providing an inert or relatively inert gas to a positive pressure within the respective tanks and chamber.

Abstract: A method and apparatus for DC-DC conversion. The apparatus includes a voltage detector (152) for detecting a voltage level in the circuit; a capacitive voltage doubler configuration of the DC to DC conversion circuits (130); a capacitive voltage tripler configuration of the DC to DC conversion circuits (130); selector circuitry (134) responsive to the voltage detector (152) for enabling the doubler or tripler configurations; and a voltage regulator (132) for regulating the converted DC voltages. The selector circuitry (134) initially enables the doubler, and then disables the doubler and enables the tripler when the voltage level drops below a reference voltage. In an alternate embodiment, high load signal HLVBB is provided when a high power load is to be enabled, such that the selector circuitry (134) temporarily disables the doubler and temporarily enables the tripler until the high load signal is inactive.

Abstract: A receiver circuit (10), and method for automatic frequency control of a receiver circuit (10) suitable for receiving a radio frequency (RF) signal, featuring determination of at least one parameter other than a frequency error of a signal which is mixed with the RF signal received by the receiver circuit; and adjusting the frequency of the signal which is mixed with the RF signal based on the frequency error if the at least one parameter satisfies a predetermined criterion.

Abstract: A modulation scheme (600) useful in a voice paging system in which both of two orthogonal modulation components (500 and 510) are used to carry two halves of a single voice message destined for a receiver, or two separate voice messages for a receiver. The single voice message is transmitted in half the time.

Abstract: A liquid cooled power dissipation apparatus (10) includes a metal matrix composite heat sink (11) with an insulation layer (17) integral to the apparatus (10). The insulation layer (17) is made integral to the apparatus (10) during infiltration of the metal matrix composite heat sink (11). Electronic components 23 are situated on top of the insulation layer (17).

Abstract: A two-way messaging system (100) having a plurality of message subscriber units (500) and a base station (220) in each of a plurality of cells (210). The base station has a transmitter (224) for transmitting messages in an associated cell (210) and a receiver (228) associated therewith for receiving response signals from message subscriber units in a cell. A system controller (300) is coupled to each base station (220) and has a memory (320) for storing the customer paging area data for each message subscriber unit. The system controller (300) receives message requests and automatically updates the customer paging area data for each message subscriber unit (500) by tracking the mobility pattern of each message subscriber unit (500) in the messaging system coverage area (200).

Abstract: A semiconductor wafer contact system includes a base substrate (13) which has an array of raised supports (18). The array of raised supports (18) are distributed in a pattern corresponding to the pattern of electrical contacts (12) on the semiconductor wafer (10), to be contacted. In between the base substrate (13) and the wafer to be contacted (10) is a flexible circuit layer (14) including an array of electrical contacts (15) having the same pattern as the contacts (12) of the wafer and the raised supports (18). The raised supports (18) provide focused and localized force, pressing the membrane test contacts (15) against the wafer electrical contacts (12).

Abstract: A non-venting hazardous material liquid dispensing system (25) includes a removable supply vessel (7) coupled to a gas source (1) and a permanent buffer vessel (11). The permanent buffer vessel (11) is additionally coupled through a suction pump (14) to the removable supply vessel (7). The suction pump (14) suctions pressure off the permanent supply vessel (11), transferring the pressure to removable supply vessel (7). The transfer of pressure causes hazardous material liquid (34) to be drawn from the removable supply vessel (7) into permanent buffer vessel (11). The permanent buffer vessel (11) dispenses hazardous material liquid (34) to a process tool.

Abstract: A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).

Abstract: A surface mount package (10) includes a leadframe (14) facing away from the mounting surface such that the primary heat path is away from the mounting surface. The package may be a modified TO-220, wherein the tab (16) of the leadframe is bent down toward the mounting surface, and the leads (20) are bent down and under the package. Such an embodiment provides for a small footprint and is relatively easy to manufacture.

Abstract: An apparatus for and method of determining the coplanarity of leads of a semiconductor device is provided. The apparatus comprises a base (24) for placing the semiconductor device, and a plurality of mirrors (38) and (36) surrounding the base. The mirrors reflect an image of the leads of the semiconductor device to a camera. The camera records an image from which the lead coplanarity is determined. The base contains an optical datum (34) which provides a reference plane from which to measure coplanarity. The mirrors can be placed such that an off-axis image of the leads is reflected to the camera. The off-axis image improves the apparent sensitivity of the coplanarity measurement.

Abstract: A system and method for aligning a semiconductor device (10) to a fixture (11) is provided. A first physical alignment feature (12) on the semiconductor device (10) and a second physical alignment (24) on the fixture (11) mate to align and hold the semiconductor device (10) in place. In one embodiment the physical alignment features (12) and (24) are produced using standard photolithography techniques, resulting in precise alignment features. In another embodiment the physical alignment features (12) and (24) are designed and placed to control the direction the thermal expansion of the semiconductor device (10) relative to the fixture (11).

Abstract: An optocoupler package (40) has two pre-molded thermoplastic halves (42, 54); one containing the emitter (16) and the other containing the detector (18). The detector half (54) has a well (56) where the detector (54) is located. The well (56) is filled with silicon die coat gel (24). The emitter half (42) has a similar well (48) containing the emitter. Surrounding the well (48) of the emitter half is a protruding wall (50) with relief vents (52). The wall (50) is configured to fit into the perimeter of the well (56) of the detector package half (54). When the package (40) is assembled, the protruding wall (50) of the emitter half (42) is inserted into the well (56) of the detector package half (54), thereby displacing the gel (24) so as to completely fill the internal chamber (66) and spill into the relief vents (52).

Abstract: A system for locating electrically conductive features such as device terminals (104) of a semiconductor die device under test (103) includes an array of test terminals (101), an anisotropically conductive material (102) above the array of test terminals (101), and a semiconductor die (103). The array of test terminals has a pitch (203) much smaller than the pitch (204) of the device terminals (104). Individual test terminals (105) of the array of test terminals (101) are scanned to locate the device terminals (104). Once the device terminals (104) are located, the test terminals (105) are configured to send and receive functional signals required for functionally testing the device under test (103).

Abstract: A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exposure to boiling water for times up to twenty minutes and maintain a refractive index, N.sub.f, greater than 2.0, and a preferred crystalline orientation ratio, I(002)/I(102), in excess of 1000.

Abstract: A semiconductor device having improved heat dissipating capability is provided. The preferred device in accordance with the invention includes an electronic device (12) formed in a surface (14) of a semiconductor die (10). The surface (14) is covered with a layer of diamond (20). Openings (24) are provided in the diamond layer (20) for access to the electronic device. A metallized pad (26) is provided on top of the diamond layer (20). Additionally, solder bumps (28) pass through the openings (24) in the diamond layer (20). A die attach substrate (32) is attached to the metallized pad (26) and the bumps (28). Heat is dissipated uniformly across the diamond layer (20) and is drawn off the device through the metallized pad (26). Electrical connections are made to the device via the solder bumps (28).