Abstract: Provided herein is a lid assembly for chemical vapor deposition (CVD) process chamber, comprising a moveable lid, two linear guide rollers connected to the lid, one or more linear lifting actuators, and a rotation actuator connected to the axis of the lid. This lid assembly may be used for opening/closing process chamber as well as wet-cleaning process chamber in chemical vapor deposition.

Abstract: A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

Abstract: Provided herein is a process chamber lid service system comprising a process chamber lid service cart and a process chamber lid service frame. The lid service frame holds the process chamber lid. The cart and the lid service frame are aligned with guide pin and alignment capture, meanwhile, the cart is aligned at the process chamber with guide frame, which is installed at the base frame of the process chamber. This lid service system may be used for opening/closing a process chamber as well as wet-cleaning the process chamber for semiconductor manufacturing.

Abstract: Provided herewith is a chamber for depositing a film on a substrate comprising a process compartment; a purge compartment, a purge ring located on the chamber body to separate the two compartments, a heater, and a shadow ring covering the periphery of the substrate. Alternatively, the chamber may further comprise a shield interconnected with the shadow ring. Still provided is a method for depositing a film of uniformity on a substrate in such a chamber. The method comprises the steps of positioning the substrate in a process compartment; flowing a process gas into the process compartment; flowing a purge gas in a purge compartment; and exhausting the process and purge gas from the chamber, thereby depositing a film of uniformity on the substrate.

Abstract: The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.