Patents Represented by Attorney Akin Grump Strauss Hauer & Feld LLP

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  • Method for reducing dimensions between patterns on a photoresist
    Patent number: 7303995
    Abstract: A semiconductor manufacturing method that includes providing a substrate, providing a layer of material over the substrate, providing a layer of photoresist over the material layer, patterning and defining the photoresist layer, depositing a layer of polymer over the patterned and defined photoresist layer, wherein the layer of polymer is conformal and photo-insensitive, and etching the layer of polymer and the layer of material.
    Type: Grant
    Filed: June 20, 2003
    Date of Patent: December 4, 2007
    Assignee: Macronix International Co., Ltd.
    Inventors: Henry Wei-Ming Chung, Shin-Yi Tsai, Ming-Chung Liang