Abstract: An apparatus for detecting a planar endpoint on a semiconductor wafer during mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contacted by the polishing surface. In a preferred form, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.

Abstract: A process for forming within a masking layer a self-aligned annular opening having a width that is substantially narrower than the space width that can be created directly using the maximum resolution of available photolithography. The process involves the following steps: creation of a mask island using conventional photomasking and etching techniques, the perimeter of said island defining the inner perimeter of the perimetric annular opening; blanket deposition of a spacer layer, the thickness of which is equal to the desired width of the annular opening; a blanket deposition of a thick protective layer that is independently etchable over the spacer layer; planarization of the protection layer to or below the top of the spacer layer; and isotropically etching the exposed spacer layer to form a narrow annular opening exposing the substrate. At this point the exposed substrate may be trenched in order to isolate the area definedd by the island, or it may be fabricated in some other configuration.

Abstract: A digitally-controlled quadrature signal generator is provided having a frequency synthesizer for receiving a digital input signal and in response thereto generating an output signal having a predetermined frequency. The output signal is split to produce an in-phase (I) signal and a quadrature-phase (Q) signal. A first table look-up memory is provided for generating a predetermined phase correction signal for use in cancelling any phase error in the quadrature-phase signal. A mixer receives the phase correction signal and the in-phase signal and in response thereto generates a phase error signal. The phase error signal is then added to the quadrature-phase signal to thereby cancel the undesirable phase error. Moreover, programmable attenuator circuits or limiter circuits are provided to limit the in-phase and quadrature-phase signals and thereby cancel any undesirable amplitude error components therein.

Abstract: A process is disclosed for delineating a patterned electroconductive coating on a substantially nonconductive substrate. The process can be used on substrates having a thickness in excess of 50 microinches. The process involves forming a substantially continuous electroconductive film on a substrate. An air abrasive resistant continuous mask film of metallic material is applied to the electroconductive film and etched to form masked and unmasked portions of the electroconductive film corresponding to the desired patterned coating. The unmasked portions of the electroconductive film are removed to leave the masked portions of the electroconductive film remaining on the substrate. The mask film can then be removed from the electroconductive film resulting in the desired pattern delineated in the electroconductive film on the substrate or the mask can remain in place and be used to form an integral part of the device formed with the substrate.