Patents Represented by Attorney Alex Friedman
  • Patent number: 3988181
    Abstract: An improved wafer type semiconductor may be fabricated by depositing an insulating film layer of predetermined thickness on a semiconductor substrate, preferably of silicon, depositing a substantially pure polycrystalline silicon layer of predetermined thickness on the insulating film layer, and thereafter depositing a doped oxide film layer of predetermined thickness on the substantially pure polycrystalline silicon layer, and effecting diffusion of the dopant into the pure polycrystalline silicon layer whereby a semiconductor wafer with a resistance of several meg-ohms.cm is provided.
    Type: Grant
    Filed: May 30, 1973
    Date of Patent: October 26, 1976
    Inventors: Fukashi Imai, Yukio Morozumi
  • Patent number: D242923
    Type: Grant
    Filed: June 23, 1975
    Date of Patent: January 4, 1977
    Inventor: Richard Dattner
  • Patent number: D243070
    Type: Grant
    Filed: November 25, 1974
    Date of Patent: January 18, 1977
    Inventors: Alan J. Burgheimer, George J. Franks
  • Patent number: D243443
    Type: Grant
    Filed: October 6, 1975
    Date of Patent: February 22, 1977
    Inventor: Tadaaki Hayashi
  • Patent number: D243660
    Type: Grant
    Filed: November 14, 1975
    Date of Patent: March 15, 1977
    Assignee: Estee Lauder, Inc
    Inventor: Ira Howard Levy