Patents Represented by Attorney Alison Mortinger

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  • Asymmetrical field effect transistor
    Patent number: 6015991
    Abstract: Disclosed is an asymmetric field effect transistor which comprises a first region serving as source, a second region serving as drain, a thin gate oxide and a gate electrode. The gate electrode is asymmetric and one of its sidewalls is sloped. The second region extends underneath said sloped sidewall. The part of said second region which extends underneath said gate electrode is less doped than the remaining part of said second region. Furthermore, said second region has a sloped junction edge underneath said gate electrode.
    Type: Grant
    Filed: March 12, 1997
    Date of Patent: January 18, 2000
    Assignee: International Business Machines Corporation
    Inventors: Donald C. Wheeler, Jeffrey P. Gambino, Louis L. Hsu, Jack A. Mandelman, Rebecca D. Mih