Abstract: A method and program-load circuit is for regulating the voltages at the drain and body terminals of a non-volatile memory cell being programmed. These voltages are applied from a program-load circuit connected in a conduction pattern to transfer a predetermined voltage value to at least one terminal of the memory cell. The method includes a step of regulating the voltage value locally, within the program-load circuit, to overcome the effect of a parasitic resistor present in the conduction pattern.
Type:
Grant
Filed:
December 27, 2002
Date of Patent:
October 26, 2004
Assignee:
STMicroelectronics S.r.l.
Inventors:
Rino Micheloni, Sabina Mognoni, Ilaria Motta, Andrea Sacco