Abstract: A method for stopping replay tornadoes in a processor. The method of one embodiment comprises scheduling an instruction for execution speculatively. A determination is made whether the instruction executed correctly. The instruction is routed to a replay mechanism if the instruction did not execute correctly. A determination is made whether a replay tornado exists. The instruction is routed for re-execution if the instruction executed incorrectly and no replay tornado exists. Breaking the replay tornado if the replay tornado exists. Replay safe instructions in the pipeline are retired. Non-replay safe instructions in the pipeline are marked for re-execution. The non-replay safe instructions are rescheduled for re-execution.

Abstract: The present invention is in the field of flash memory. More particularly, embodiments of the present invention may provide a negative voltage for erasing when coupled to a memory cell to be erased and provide voltages to read or program when not coupled to a memory cell that is selected to be erased. Embodiments may also provide a high magnitude negative voltage to erase; a low impedance, low voltage current to read or program; and burn little to no current when not coupled to a memory cell that is selected to be erased.

Abstract: Disclosed is a method and apparatus for an off boundary memory to provide off boundary memory access. The off boundary memory includes a right memory array having a plurality of right memory rows and a left memory array having a plurality of left memory rows. This forms a memory having a plurality of row lines, each row line having a right memory row and a left memory row, respectively. An off boundary row address decoder is coupled to both the right and left memory arrays and is capable of performing an off boundary memory access which includes accessing a desired plurality of memory addresses from one of a right or left memory row of a row line and from one of a left or right memory row of an adjacent row line at substantially the same time within one memory access cycle.

Abstract: A method for stick and spoke replay in a processor. The method of one embodiment comprises dispatching an instruction for execution. The instruction is speculatively executed. It is determined whether the instruction executed correctly. The instruction is routed to a replay mechanism if the instruction did not execute correctly. It is determined incorrect execution of the instruction is due to a long latency operation. The instruction is routed for immediate re-execution if the incorrect execution is not due to the long latency operation. The routing of the instruction for re-execution is delayed if the incorrect execution is due to the long latency operation. The instruction is re-executed if the instruction did not execute correctly. The instruction is retired if the instruction executed correctly.

Abstract: The present invention provides a mechanism for supporting high bandwidth instruction fetching in a multi-threaded processor. A multi-threaded processor includes an instruction cache (I-cache) and a temporary instruction cache (TIC). In response to an instruction pointer (IP) of a first thread hitting in the I-cache, a first block of instructions for the thread is provided to an instruction buffer and a second block of instructions for the thread are provided to the TIC. On a subsequent clock interval, the second block of instructions is provided to the instruction buffer, and first and second blocks of instructions from a second thread are loaded into a second instruction buffer and the TIC, respectively.

Abstract: A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.

Abstract: A heat exchanger. The heat exchanger includes a first heat dissipation mechanism having a first heat dissipation capacity and a second heat dissipation having a second heat dissipation capacity. At least one heat transfer mechanism thermally couples the first heat dissipation mechanism and the second heat dissipation mechanism to a heat generating component. The heat transfer mechanism has a limited conductivity portion in the thermal path to either the first or the second heat dissipation mechanism.

Abstract: The present invention is in the field of flash memory. More particularly, embodiments of the present invention may provide a negative voltage for erasing when coupled to a memory cell to be erased and provide voltages to read or program when not coupled to a memory cell that is selected to be erased. Embodiments may also provide a high magnitude negative voltage to erase; a low impedance, low voltage current to read or program; and burn little to no current when not coupled to a memory cell that is selected to be erased.

Abstract: A method for dynamically varying a clock frequency in a processor. The method of one embodiment comprises driving a clock distribution network with a clock output from a phased locked loop (PLL). An adjustable clock generator is locked with the phased locked loop. The adjustable clock generator is substituted for the PLL on the clock distribution network.

Abstract: A method for voltage detection and lockout. The method of one embodiment first compares a reference voltage to a supply voltage to determine whether the voltage supply voltage is greater than the reference voltage. The reference voltage is validated by determining whether the reference voltage is at least a valid voltage potential. An unlock signal is generated if the supply voltage is greater than the reference voltage and if the reference voltage is valid.

Abstract: The present invention provides a mechanism for handling interrupts on a processor that supports multiple-threads concurrently. The processor's resources are allocated to provide multiple logical processors. In response to a common interrupt, the logical processors vie for access to a shared register. The first logical processor to access the shared register handles the common interrupt. The remaining logical processors return from the interrupt.

Abstract: A method for high precision charge pump regulation. The method of one embodiment comprises comparing an output feedback voltage with a reference voltage to determine whether the output feedback voltage is greater than or less than the reference voltage. In response to the comparison, either increasing a frequency for a clock signal if the output feedback voltage is less than the reference voltage, decreasing the frequency for the clock signal if the output feedback voltage is greater than the reference voltage; or disabling the clock signal if the output feedback voltage is much greater than the reference voltage. A pumped voltage is generated in response to changes to the clock signal.

Abstract: A method and an apparatus for dynamically varying a clock frequency in a processor to adapt to VCC voltage changes. The method of one embodiment includes sampling a supply voltage at a plurality of locations. The values of said supply voltage are communicated to a clock generator. A clock frequency of a clock signal generated from the clock generator is adjusted in response to an evaluation of the sampled values of the supply voltage.