Abstract: A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.

Abstract: A multiple laser optical sensing system and method for detecting target characteristics are disclosed. The system includes a laser source with at least two emission apertures from which laser signals are emitted. The system also includes at least one detector, which is operationally responsive to the laser source. Finally, the system includes a microprocessor that is operationally coupled to the detector(s). In operation, the laser source emits into an environment at least two laser signals, one from each emission aperture. The detector detects the laser signals after the signals pass through the environment, which is occupied by a target and the microprocessor determines target characteristics based on the laser signals received by the detector(s).

Abstract: Improved resonant reflectors are provided for increased mode control of optoelectronic devices. Some of the resonant reflectors provide improved mode control while not requiring significant additional processing steps, making them ideal for commercial applications. Other resonant reflectors reduce or eliminate abrupt changes in the reflectively of the resonant reflector across an optical cavity of an optoelectronic device, allowing them to reduce or eliminate undesirable diffraction effects that are common in many resonant reflectors.

Abstract: A die having a semiconductor laser driven by a differential drive circuit is provided. The die provides a matched load to the drive circuit by also having a balancing load with an impedance, including both resistive and reactive components substantially identical to the load impedance of the semiconductor laser fabricated on the die. With the balancing load and semiconductor laser pair, the die prevents impedance-mismatch-induced drive problems that occur in high frequency operation, e.g., above about 1 GHz. The semiconductor laser may be a vertical cavity surface emitting laser (VCSEL), for example, as are used in high bandwidth applications like Gigabit Ethernet and Fibre Channel Applications. Furthermore, the die can form an array of balancing and semiconductor laser pairs.

Abstract: The invention includes both devices and methods of production. A device in accordance with the invention includes a top surface and a bottom surface, a through wafer via extending from the top surface to the bottom surface, an optoelectronic structure and an ion implanted isolation moat, wherein the optoelectronic structure and the through wafer via are enclosed within the isolation moat. A method in accordance with the invention is a method of producing a device that includes the steps of forming an optoelectronic structure, forming a through wafer via, extending from a top surface to a bottom surface of the device and forming an ion implanted isolation moat, wherein the through wafer via and the optoelectronic structure are enclosed by the isolation moat.

Abstract: The invention provides photonic crystal optical demultiplexer devices produced from a three-dimensionally-periodic, porous, dielectric, photonic crystalline structure, which has surfaces or interfaces that are inverse replicas of the surfaces of a monodispersed sphere array. Such a photonic crystal optical demultiplexer comprises a three-dimensionally-periodic, porous, dielectric, photonic crystalline structure, which structure has surfaces or interfaces that are inverse replicas of the surfaces of a monodispersed sphere array, wherein necks exists between neighboring spheres in said sphere array and the average sphere diameter does not exceed about 1000 nm. A first optical waveguide is positioned to direct a broad wavelength band of incident light onto the crystalline structure. A second optical waveguide positioned to receive a narrow wavelength band of reflected light from the crystalline structure.

Abstract: A versatile system and method for VCSEL (vertical cavity surface emitting laser) bar code and data scanning is disclosed, including a housing (102) having a scanning surface (116), a detector element (106) disposed within the housing in close proximity and normal to the scanning surface, a VCSEL component (104) disposed within the housing in close proximity to the detector element and scanning surface, and an aperture (122) formed within the housing between the scanning surface and the detector element.

Abstract: A self-aligned optical coupler, and method of manufacturing thereof, for conducting light from and to vertical and/or horizontal ports on optical devices or optoelectric integrated circuits. The device or circuit having the respective port has keys and/or slots on the device or circuit for self-aligning an end of the optical coupler to the port. The end has corresponding slots and/or keys. Visual alignment marks may be used instead so as to permit automatic alignment with machine vision devices. The coupler may have one or a plurality of waveguides. One of the ends of the coupler may have a connector for a self-aligning optical connection to a connector receptacle of a module or a backplane.

Abstract: A device to monitor light output from a light source, including a V-groove substrate with a reflective coating deposited on at least one surface, an optical fiber, a light source positioned so that an amount of the light emitted, which is less than 100%, enters the optical fiber, a light intensity or source detector positioned so that at least some of the light emitted from the light source, that did not enter the optical fiber impinges upon the light intensity detector, and feedback circuitry. A method of producing a device including the steps of coating a surface of a V-groove substrate with a reflective material, placing a light source in said V-groove substrate.

Abstract: A wavelength selective detector having a first absorbing layer for absorbing light with a wavelength below a lower band cutoff, a second absorbing layer downstream of the first absorbing layer for absorbing light with a wavelength below an upper band cutoff, and a confinement layer situated between the first and second absorbing layers. The lower and upper band cutoffs can be set by controlling the bandgaps and/or thicknesses of the first and second absorbing layers. The wavelength selective detector of the present invention has a good out-of-band rejection, a narrow spectral responsivity, and a high in-band responsivity. In addition, the wavelength selective detector is relatively easy to manufacture using conventional integrated circuit fabrication techniques.

Abstract: In accordance with the invention, there is provided a device having a first portion with at least one quantum well, where the first portion emits light, a spacer layer, and a second portion with an amplifying region with at least one quantum well, where the device is configured so that the spacer layer transmits the light beam emitted by the first portion and the amplifying region increases the intensity of the light beam. In accordance with another aspect of the invention, there is provided a method of manufacturing a vertical cavity surface emitting laser having the steps of, forming a first portion, having at least one quantum well, that emits light, forming a spacer layer made of a material that is transmissive of light emitted from the first portion, forming a second portion having at least one quantum well, where the second portion is positioned over the spacer layer and the spacer layer is positioned over the first portion.

Abstract: Vertical cavity surface emitting laser arrays that emit light at different wavelengths and that are suitable for wavelength multiplexed applications. Such arrays are beneficially produced using binary masks that control the thickness elements of a spacer, which in turn controls the wavelengths of light from the individual VCSEL elements. The binary masks can be used to control either deposition (growth) or etching. The binary masks, which are comprised of open areas and closed areas, are selectively applied to an intermediate VCSEL array structure.

Abstract: A laser structure (10, 60) and method of manufacturing a vertical-cavity surface-emitting laser (VCSEL). The laser structure (10, 60) is adapted to lase at a wavelength lambda and includes a first mirror stack (14), an active region (18) disposed on the first mirror stack (14) and a second mirror stack (22) disposed on the active region (18). The second mirror stack (22) includes a plurality of alternating mirror layer pairs (a, b) with a phase shifting region (24) disposed therein. The phase shifting region (24) is positioned outside the optical aperture (25) and away from the active region (18) by at least one mirror layer pair, with the optical thickness of the phase shifting region (24) being a multiple of one-fourth lambda, the phase shifting region (24) being oxidized reducing the reflectance of the second mirror stack (22) outside the aperture relative to inside the aperture.

Abstract: A method and system for coupling a laser (e.g., vertical cavity surface emitting laser (VCSEL)) to an optical fiber is disclosed. A plurality of optical modes associated with a laser, e.g., a VCSEL, are scrambled, and radiation from the VCSEL can be focused on a fiber facet associated with the optical fiber. Thereafter, the VCSEL can be coupled to the optical fiber to thereby improve coupling repeatability while reducing mode selective coupling of the VCSEL to the optical fiber. The optical modes can be scrambled utilizing an optical scattering surface. Such an optical scattering surface can produce a Lambertian-like scattering source such that optical modes thereof are combinable to form a plurality of optical modes. The VCSEL can be coupled to said optical fiber by butt-coupling said optical fiber to the multimode VCSEL through a receiver formed in a housing for the VCSEL and/or by utilizing at least one lens for imaging radiation/signals onto a particular spot.

Abstract: Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.

Abstract: A graded optical element is provided that includes graded layers of optical material, wherein the layers may or may not have different indexes of refraction. A method for making such a graded thickness optical element is also provided. A masking layer is preferably spaced above a substrate, where the masking layer has at least one aperture therein. Optical material is then deposited on the substrate through the aperture in the masking layer to form a layer of refr material that extends laterally beyond the aperture in the masking layer in at least one region.

Abstract: In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the opposite direction from the quantum well material; to allow the use of ordinary deposition materials and procedures. By interspersing thin, unstrained layers of e.g. gallium arsenide in the quantum well between the strained layers of e.g. InGaAs, the GaAs layers act as mechanical stabilizers keeping the InGaAs layers thin enough to prevent lattice relaxation of the InGaAs quantum well material. Through selection of the thickness and width of the mechanical stabilizers and strained quantum well layers in the quantum well, 1.3 micron and above wavelength lasing is achieved with use of high efficiency AlGaAs mirrors and standard gallium arsenide substrates.

Abstract: A method and system for determining the frequency of a pulse input signal is disclosed. A pulse count and a timer count can be captured at a start and end of a predetermined measurement interval to thereby obtain a start pulse count and an end pulse count and a start pulse time and an end pulse time thereof. A pulse frequency can then be determined, the pulse frequency comprises the end pulse count minus the start pulse count divided by the end pulse time minus the start pulse time, thereby permitting a highly accurate frequency measurement of the pulse input signal to be obtained over a wide frequency range. The pulse count and the timer count can be captured respectively utilizing a pulse counter and a timer. The pulse frequency generally comprises a frequency of an input pulse signal, such that the pulse frequency is determined based on an accuracy dependent only upon a reference timer clock.

Abstract: A hermetically sealed photonic device submount includes a photonic device mounted on a substrate material and sealed in a flexible hermetic seal. In one configuration, the photonic device is configured to emit or to receive light through the substrate material. In this configuration, the photonic device is covered with an adhesive layer and a metal layer deposited onto the adhesive layer. In another configuration, the photonic device is configured to emit or to receive light in a direction substantially vertically upward from the substrate material. In this configuration, a cover is placed over the photonic device, then the cover is hermetically sealed to the substrate material with an adhesive layer and a metal layer depositd onto the adhesive layer. In both configurations, the photonic device submounts are hermetically sealed according to various aspects of the present invention on the substrate material without using a separate package.

Abstract: An opto-electronic integrated circuit device includes top emitter/detector devices on a substrate. The top emitter/detector devices have top and bottom sides. The top emitter/detector devices are capable of emitting and detecting light beam from the top side, and have top contact pads on the top side. An optically transparent superstrate is attached to the top side. Micro-optic devices such as lenses can be attached to the superstrate. Top contact pads are connected to bottom contact pads. The bottom contact pads are attached to matching pads of an integrated circuit chip to produce an opto-electronic integrated circuit.