Abstract: An apparatus for rapidly and automatically handling packaged integrated circuits (ICs) during the loading or unloading of burn-in boards. The apparatus also segregates and offloads packaged ICs into a plurality of reservoirs for controlled delivery into suitable transport media on the basis of the level of functionality attained by each part during the burn-in process. The apparatus is computer controlled, with operator interface and an electronic control panel. The apparatus employs a linear induction motor drive system to rapidly, precisely and accurately move the ICs both between a loading/unloading location and a staging location, and at the staging location itself during the segregation and offloading steps. The system may be extended to operate in either the single or dual mode, employing two sorting and offloading components to unload a single device under test board.

Abstract: This invention constitutes a process for fabricating a structure which, when incorporated in an integrated circuit, will reduce current leakage into the substrate from transistor source/drain regions. The structure is particularly useful in dynamic random access memories, as it will minimize the effect of alpha particle radiation, thus improving the soft error rate. A trench is etched through the transistor source or drain region. A high dosage of oxygen ions is then implanted at low energy in the floor, but not the sidewalls of the trench. The resulting oxygen-implanted silicon layer at the bottom of the trench is then converted to a silicon dioxide barrier layer through rapid thermal processing or furnace annealing in an inert ambiance. The trench is then lined with a deposited contact layer that is rendered conductive either during or subsequent to deposition. Contact between the contact layer and the source or drain region is made through the sidewalls of the trench, which were not implanted with oxygen.