Abstract: A conductor-filled damage propagation barrier is formed extending into a low-k dielectric layer between a fuse and an adjacent circuit element for preventing propagation of damage during a fuse blow operation. Conductor material filling the damage propagation barrier is formed from the same conductor layer as that used to form an interconnect structure.

Abstract: The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased.

Abstract: In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the top of the lower dielectric layer; the trench is filled and the resistor layer outside the trench is removed, after which a second dielectric layer is deposited. Vias passing through the second dielectric layer to contact the resistor then have the same depth as vias contacting metal interconnects in the lower dielectric layer. A tri-layer resistor structure is employed in which the resistive film is sandwiched between two protective layers that block diffusion between the resistor and BEOL ILD layers.

Abstract: The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract: Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical capacitor plates from a plurality of levels in the back end, the plates being formed by connecting electrodes on two or more levels of the back end by vertical connection members.

Abstract: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract: A conductor-filled damage propagation barrier is formed extending into a low-k dielectric layer between a fuse and an adjacent circuit element for preventing propagation of damage during a fuse blow operation. Conductor material filling the damage propagation barrier is formed from the same conductor layer as that used to form an interconnect structure.

Abstract: In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the top of the lower dielectric layer; the trench is filled and the resistor layer outside the trench is removed, after which a second dielectric layer is deposited. Vias passing through the second dielectric layer to contact the resistor then have the same depth as vias contacting metal interconnects in the lower dielectric layer. A tri-layer resistor structure is employed in which the resistive film is sandwiched between two protective layers that block diffusion between the resistor and BEOL ILD layers.

Abstract: A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

Abstract: The present invention provides a technique for detecting a defect in a tape medium within a relatively short or narrow range. A tape defect detection device includes: a read unit for reading data from a tape medium; an error correction unit for performing error corrections for the data read by the read unit; a correction number counting unit for counting the number of the error corrections, made by the error correction unit, for each of multiple divided areas of the tape medium; a temporary storage unit for temporarily storing, for each of the areas, the number of the error corrections counted by the correction number counting unit; and a detection unit for detecting a defect in the tape medium, on the basis of a distribution of divided areas each having a larger number of error corrections than other divided areas on the tape medium.

Abstract: A diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The diode has an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the cathode and anode have multiple, vertically abutting diffusion regions. The cathode and anode are disposed between and bounded by adjacent isolation regions.

Abstract: A method and system for improving power distribution and/or current measurement on a printed circuit board is disclosed. According to the invention, a first power plane adapted for current measurement includes a first segment to which a current source is connected and a second segment to which other devices may be connected, forming the current load. A third segment is used to measure the current between the first segment and the second segment through two vias that link two points of the third segment to, preferably, two pads of the external layer. In a preferred embodiment, vias are connected to the first segment so that current flow in the third segment is linear, to improve and simplify current determination. The resistivity between the pair of vias may be computed or estimated using calibrated currents.

Abstract: Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical capacitor plates from a plurality of levels in the back end, the plates being formed by connecting electrodes on two or more levels of the back end by vertical connection members.

Abstract: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract: In order to make plating thickness uniform in a metal plating apparatus, a metal plating apparatus capable of performing metal plating to a uniform thickness is provided by aligning lines of electric force uniformly and in parallel by disposing a pair of conductive perforated plates 20a and 20b, which are electrically connected to each other, between plating metals 16 immersed in a plating solution and an object 18 to be plated.

Abstract: A method for mounting a semiconductor part on a circuit substrate is provided, which includes preparing the semiconductor part having a surface thereof provided with a plurality of stud-bumps, preparing a solder substrate having a surface thereof on which solid-solders corresponding to respective ones of the plurality of stud-bumps are arranged, preparing the circuit substrate having a surface thereof provided with connecting pads corresponding to respective ones of the plurality of stud-bumps, attaching the corresponding solid-solders on the solder substrate to respective tip ends of the plurality of stud bumps, separating the solid-solders attached to the tip ends of the stud-bumps from the solder substrate, contacting the solid-solder attached to respective ones of the tip ends of the stud-bumps with the corresponding connecting pads, and heating the solid-solders contacted with the corresponding connecting pads thereby establishing solder connection between respective ones of the stud-bumps and the corres

Abstract: A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielectric using the same process as the other interconnects on that level of the back end (preferably dual damascene). Some versions of the capacitors have perforations in the plates and vertical conductive members connecting all plates of the same polarity, thereby increasing reliability, saving space and increasing the capacitive density compared with solid plates.

Abstract: The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

Abstract: Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinsic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

Abstract: The invention relates to fitting a curve to a plurality of data points. A “seed curve” is determined from a first set of data points selected from the plurality of data points. From the remaining data points, data points are individually selected and a determination is made for each selected data point as to whether the data point is acceptable to be included with the first set of data points. When a data point is determined to be acceptable, the data point is included with the first set of data points to form another set of data points. After each of the other data points are evaluated for inclusion with the first set of data points, a best fit curve is determined from a final set of data points.