Abstract: In one aspect, reading a memory includes conductively coupling a memory cell and a first reference cell to respective lines of a selected bit line pair for a voltage development interval. During the interval a voltage differential develops on the bit line pair and is transmitted to a corresponding sense line pair. A second reference cell is precharged for the selected bit line pair for a reference cell precharging interval, the reference cell precharging interval being concurrent with at least a portion of the voltage development interval. A sense amplifier is enabled for a voltage detection interval. The bit line pair is precharged for a bit line precharging interval. The sense line pair is isolated from the bit line pair during the bit line precharging interval and the bit line precharging interval is concurrent with at least a portion of the voltage detection interval.