Abstract: When an error requiring a retry operation has occurred, information concerning the error requiring a retry operation is stored every time. The information includes a sector number (or beginning sector number and number of sectors), the content of the command; a write or read designation, and the number of the times of error occurrence in the sector (or number of the times of retry operation), for example. In case of recording information, like the prior art, information to be written which is stored in a buffer memory is held as it is. Since the information concerning an error requiring a retry operation is stored, even though an error requiring a retry operation occurs repeatedly, a write and/or read operation of the next executable command to another track is executed without immediately switching to the retry operation. Thus, other commands are executed between the occurrence of the error requiring a retry operation and actual execution of the retry operation.

Abstract: At each network node, a packet classification unit makes a judgement to transfer only a packet necessary to be processed by software to a packet processing program processor and transfer other packets directly to a routing processor. Processing history information indicating the process history executed at each network node on a network route is transferred to the other network nodes so that other network nodes can store the processing history information in respective processing history repository table. Each node refers to this table and further transfers only the packet necessary to be processed by software to the packet processing processor.

Abstract: A method for fabricating a semiconductor integrated circuit device comprising a nonvolatile memory cell, comprises the steps of forming a first gate material which comprises a silicon film containing no impurities, whose top surface is covered with an oxidation-resistant mask, and whose width in the gate-length direction is prescribed, on part of the surface of a first gate insulating film, forming a thermal-oxidation insulating film on the surface of an active region of a semiconductor substrate through thermal oxidation, removing an oxidation-resistant mask, forming a second gate material which comprises a silicon film into which impurities are introduced and whose width in the gate-length direction is prescribed, on each surface of the thermal-oxidation insulating film and the first gate material forming a second gate insulating film on the surface of the second gate material, and forming a third gate material on the surface of the second gate insulating film.

Abstract: The object of the invention is to provide a charging generator 1 which can avoid occurrence of overvoltage due to failure of equipment, which comprises: an a.c. generator 10 having armature windings 10a, 10b, 10c and a field winding 10d for generating an a.c.; a rectifier 11 having a plurality of power zener diodes 11a-11f having an intrinsic breakdown voltage Vz for converting the a.c. output from the armature windings to a d.c.; a current inhibit means which receives the d.c. output from the rectifier via field winding 10d and inhibits a field current which flows through the field winding; a voltage detection means for detecting a voltage of the d.c. output from the rectifier; and a voltage regulator 13, which includes a protection control means for controlling the current inhibit means in accordance with a result of judgment which is larger between a detected value of the d.c. voltage and a predetermined protection cut-off voltage VB, for regulating the d.c.