Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the ions at said pH.

Abstract: A statistically uniform micro-texture on a polishing pad surface improves break-in preconditioning time, and is measured by: Land Surface Roughness, Ra, from about 0.01 &mgr;m to about 25 &mgr;m; Average Peak to Valley Roughness, Rtm, from about 2 &mgr;m to about 40 &mgr;m; Core roughness depth, Rk, from about 1 to about 10; Reduced Peak Height, Rpk, from about 0.1 to about 5; Reduced Valley Height, Rvk, from about 0.1 to about 10; and Peak density expressed as a surface area ratio, RSA, ([Surf.Area/(Area−1)]), 0.001 to 2.0.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract: A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.