Patents Represented by Law Firm Armstrng, Westerman, Hattori, McLeland & Naughton
  • Ferroelectric memory device
    Patent number: 5623439
    Abstract: A ferroelectric memory device includes a channel layer of a dielectric material containing oxygen, source and drain electrode provided on the channel layer across a channel region defined in the channel layer, a ferroelectric memory layer provided on the channel layer so as to cover at least the channel region, and a write control electrode provided on the ferroelectric memory layer for applying an electric field thereto.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: April 22, 1997
    Assignee: Fujitsu Limited
    Inventors: Kohtaroh Gotoh, Hirotaka Tamura, Akira Yoshida