Abstract: A semiconductor non-volatile memory device includes: a memory cell array having a plurality of memory cells, each including a non-volatile memory cell portion; a high voltage generating circuit for generating a high voltage required for storing data; a plurality of high voltage wirings, each being allocated to each of a corresponding plurality of blocks divided into units of a predetermined number of cells in the memory cell array and being commonly connected to all of the cells in a corresponding block; and a plurality of high voltage feeding circuits, each feeding the high voltage from the high voltage generating circuit to the cells in the corresponding block, and when a leak occurs in any one of the cells in the corresponding block, stopping the feed of the high voltage.