Abstract: An integrated SPM sensor including a cantilever having a probe on its free end, a supporting base for supporting the cantilever on its fixed end, and signal lines for conducting a signal picked up by the probe. The probe is a photodetector element constructed of any of a junction gate-type photo FET, a Schottky gate-type photo FET, an MOS-type photodiode and a Schottky-type photodiode. The integrated SPM sensor substantially lowers noise due to thermally excited dark current and easily detects weak incident light.