Patents Represented by Attorney Arthur J. Torsigleri

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  • Plasma etching of semiconductors
    Patent number: 5626716
    Abstract: A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: May 6, 1997
    Assignee: Lam Research Corporation
    Inventors: William F. Bosch, Helen H. Zhu, Syed A. Haider