Abstract: System, method and program for managing a production server. An authentication server sends to the production server via a network a group password for a GroupID to access a file in the production server. A user at a workstation sends via a network to the authentication server an individual UserID and corresponding individual password for the user and a request for the group password for the GroupID to access a file in the production server protected by the group password. In response, the authentication server authenticates the individual UserID with the corresponding individual password and returns to the workstation the group password for the GroupID. After receiving the group password from the authentication server, the user at the workstation sends via a network to the production server the group password and GroupID and a request to access the file in the production server protected by the group password.

Abstract: A circuitized semiconductor substrate comprising a layer of dielectric material having holes therethrough, a catalyst seed layer lining the walls of the holes along the surface of the dielectric material, and a nickel layer in the openings and a layer of copper above the nickel layer, along with a method for its fabrication. The invention also provides copper-nickel laminate PTH barrels and methods for their fabrication.

Abstract: A method for forming a flip-chip-on-board assembly. An integrated circuit (IC) chip having a polyimide passivation layer is joined to a chip carrier via a plurality of solder bumps which electrically connect a plurality of contact pads on the IC chip to corresponding contacts on the chip carrier. A space is formed between a surface of the passivation layer and a surface of the chip carrier. A plasma is applied, to chemically modify the surface of the chip carrier and the passivation layer of the IC chip substantially without roughening the surface of the passivation layer. The plasma is either an O2 plasma or a microwave-generated Ar and N2O plasma. An underfill encapsulant material is applied to fill the space. The plasma treatment may be performed after the step of joining. Then, the chip and chip carrier are treated with the plasma simultaneously. Alternatively, the IC chip and chip carrier may be treat with the plasma before they are joined to one another.