Abstract: The present invention relates to a monolithic integrated demultiplexing photoreceiver that is formed on a semi-insulating InP substrate. A frequency routing device is formed on the substrate and includes a first plurality of In/InGaAs semiconductor layers. At least one p-i-n photodiode is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another.