Abstract: In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of .gtorsim.0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (.gtorsim.0.8 eV) and low (.ltorsim.0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

Abstract: A method of making a large single crystal thin film not dependent upon the size or temperature resistance of the substrate crystal by first depositing an amorphous film of the crystalline material to be produced followed by heating of the amorphous film in such a manner that nucleation of epitaxial grains is propagated through the amorphous film whereby a single crystal thin film is produced.