Abstract: A semiconductor module that densely packs integrated circuit chips to provide electronic systems or large memory modules in an array of stacked silicon boards. The semiconductor chips may be flip mounted and the back side of each chip is in thermal contact with an adjacent silicon board to provide heat conduction away from the chip.
Abstract: A process wherein a thin film of tungsten is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes an etchant and a carbon containing gas. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
Type:
Grant
Filed:
March 2, 1989
Date of Patent:
April 10, 1990
Assignee:
Texas Instruments Incorporated
Inventors:
Rhett B. Jucha, Monte A. Douglas, Cecil J. Davis