Patents Represented by Attorney, Agent or Law Firm B. Tran
  • Transistor with minimal hot electron injection
    Patent number: 6707115
    Abstract: A device comprising: a layer of gate oxide on a surface of the semiconductor substrate; a gate electrode formed on the surface of the gate oxide, the gate electrode having a drain side; a p-well implanted within a semiconductor substrate under the gate electrode; an n-well implanted in the p-well on the drain side; an n+ source region in the p-well outside of the n-well; an n+ drain region within the substrate inside the n-well; and lightly doped regions extending respectively from the source and drain regions toward the gate electrode.
    Type: Grant
    Filed: April 16, 2001
    Date of Patent: March 16, 2004
    Assignee: AirIP Corporation
    Inventor: Dominik J. Schmidt