Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.
Type:
Grant
Filed:
April 15, 1999
Date of Patent:
June 25, 2002
Assignees:
General Electric Co., United Technologies Corp., The United States of America as represented by the
Administrator of the National Aeronautics and Space
Administration
Inventors:
Harry Edwin Eaton, Jr., William Patrick Allen, Nathan S. Jacobson, Nanottam P. Bansal, Elizabeth J. Opila, James L. Smialek, Kang N. Lee, Irene T. Spitsberg, Hongyu Wang, Peter Joel Meschter, Krishan Lal Luthra