Abstract: A high-frequency amplification device includes a high-frequency amplifier including input and output sections, a first capacitor including first and second electrodes, and a first insulation film interposed therebetween. The first electrode is connected to the output section via a first inductor, and the second electrode is grounded. The amplification device further comprises a second capacitor including third and fourth electrodes and a second insulation film interposed therebetween. The third electrode is formed of a material substantially identical to that of the first electrode, and the fourth electrode is formed of a material substantially identical to that of the second electrode. The second insulation film is formed of a material substantially identical to that of the first insulation film and has a thickness substantially identical to that of the first insulation film.