Patents Represented by Law Firm Beaver Weaver Thomas & Nguyen, LLP
  • Anhydrous HF in-situ cleaning process of semiconductor processing chambers
    Patent number: 6095158
    Abstract: A method for removing glass deposition from a reactor chamber, at least one interior surface of the reactor chamber having the glass deposition deposited thereon. The invention includes introducing a gaseous cleaning mixture comprising an anhydrous hydrogen fluoride (HF) gas into the chamber interior. The invention further includes maintaining the chamber interior at a temperature of between about 0.degree. C. and about 300.degree. C., and removing a gaseous reaction byproduct from the chamber interior.
    Type: Grant
    Filed: February 6, 1997
    Date of Patent: August 1, 2000
    Assignee: Lam Research Corporation
    Inventor: John K. Shugrue