Abstract: A direct shorting contact structure comprising a metal layer (18') makes ohmic contact with a source (10) and/or drain (12) region and with a gate electrode (22). The direct contact between source or drain and gate over the active region (16) reduces the area otherwise required for such contact and eliminates a second layer (24) of interconnection metallization otherwise required for such contact. The metal layer preferably comprises a first layer (18'a) of a material selected from the group consisting of gold-germanium, nickel-germanium, gold-germanium-nickel, molybdenum-germanium, and aluminum-germanium in ohmic contact with the source or drain region and with the gate electrode and a second layer (18'b) of a good electrically conductive, thermally stable, electromigration-resistant metal capable of providing good step coverage overlying the first layer. An example of the second layer is tungsten and its nitrides and silicides.

Abstract: Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

Abstract: Certain crystalline organic semiconductor compounds, such as 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), when deposited by an ultrahigh vacuum process of organic molecular beam deposition, form highly ordered "quasi-epitaxial" films (32). Due to asymmetries in the molecular crystal structure of such compounds, the ordering of the films results in giant asymmetries in their dielectric properties. Such large dielectric asymmetries permit the construction of a variety of devices, including optical isolators (38), optically isolated lasers (48), optical isolated optical amplifiers (64), polarization-selective photodiodes (76), and metal-organic-inorganic semiconductor-metal detectors, among others.

Abstract: The speed and stability of a 4T static RAM cell (10) comprising cross-coupled inverters with two driver transistors (18, 20) and two pass-gate transistors (14,16) are improved by replacing the driver transistors with a modified driver element (33, 35), comprising at least two transistors (18, 18') having common gates and common sources and with a resistor (42) connecting the drains.

Abstract: A direct shorting contact structure comprising a metal layer (18') makes ohmic contact with a source (10) and/or drain (12) region and with a gate electrode (22). The direct contact between source or drain and gate over the active region (16) reduces the area otherwise required for such contact and eliminates a second layer (24) of interconnection metallization otherwise required for such contact. The metal layer preferably comprises a first layer (18'a) of a material selected from the group consisting of gold-germanium, nickel-germanium, gold-germanium-nickel, molybdenum-germanium, and aluminum-germanium in ohmic contact with the source or drain region and with the gate electrode and a second layer (18'b) of a good electrically conductive, thermally stable, electromigration-resistant metal capable of providing good step coverage overlying the first layer. An example of the second layer is tungsten and its nitrides and silicides.

Abstract: The present invention relates to a novel architecture and associated apparatus for the development of highly multiplexed photonic interconnection networks and holographic optical elements with maximum optical throughput efficiency and minimum interchannel crosstalk, based on parallel incoherent/coherent holographic recording and readout principles. This scheme further provides for arbitrarily weighted and independent interconnections, which are of potential importance in the development of neuro-optical computers, as well as photonic interconnection networks and multiplexed holographic optical elements. In addition, the extremely difficult problem of copying the contents of a three-dimensional holographic storage device in one step is soluble by utilization of the architectural principles and specified apparatus that are key features of this invention.