Patents Represented by Attorney Bereskin and Parr LLP/S.E.N.R.L., s.r.l.
  • Patent number: 7906672
    Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: March 15, 2011
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson