Abstract: Compositions, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary composition, among others, includes a polymer and a catalytic amount of a negative tone photoinitiator.

Abstract: Methods for the addition polymerization of cycloolefins using a cationic Group 10 metal complex and a weakly coordinating anion of the formula: [(R?)zM(L?)x(L?)y]b[WCA]d wherein [(R?)zM(L?)x(L?)y] is a cation complex where M represents a Group 10 transition metal; R? represents an anionic hydrocarbyl containing ligand; L? represents a Group 15 neutral electron donor ligand; L? represents a labile neutral electron donor ligand; x is 1 or 2; and y is 0, 1, 2, or 3; and z is 0 or 1, wherein the sum of x, y, and z is 4; and [WCA] represents a weakly coordinating counteranion complex; and b and d are numbers representing the number of times the cation complex and weakly coordinating counteranion complex are taken to balance the electronic charge on the overall catalyst complex.

Abstract: Polymeric compositions for semiconductor applications comprising 10 to 99 wt. % of norbornene-type cycloolefin monomers represented by one or more of Formula I(a), I(b), and optionally I(c) and/or I(d), 0.0005 to 0.5 wt. % of an addition polymerization procatalyst, and optionally: up to 0.5 wt. % of a cocatalyst, up to 59 wt. % of a crosslinking monomer, up to 50 wt. % of a viscosifier, up to 20 wt. % of a thixotropic additive(s), up to 80 wt. % of a filler, up to 10 wt. % of an antioxidant, and up to 0.6 wt. % of an antioxidant synergist, the total of the components of the formulation adding up to 100%. Such formulations are mass polymerized, or cured, to form polymeric compositions that have properties desirable for a variety of specific electronic, microelectronic, optoelectronic and micro-optoelectronic applications such as die attach adhesives, underfill materials, prepreg binders, encapsulants, protective layers, and other related applications.

Abstract: Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.

Abstract: A polymer comprising polycyclic repeating units having recurring ion conducting groups and optional crosslinkable groups is disclosed. The present invention provides the capability of tailoring polymers to impart unique properties to membranes fabricated from the polymers. Membranes comprising the polymers and methods for preparing the membranes and their use in ion conducting membranes, particularly in fuel cells, are also provided.

Abstract: The present invention relates to polycyclic polymers, methods for producing polycyclic polymers, and methods for their use as photoresists in the manufacture of integrated circuits. In one embodiment, the present invention relates to photoresist compositions formed from the polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer. In another embodiment, the present invention relates to photoresist compositions formed from the co-polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer with at least one non-halogenated polycyclic monomer.

Abstract: Some embodiments in accordance with the present invention relate to norbornene-type polymers and to photosensitive dielectric resin compositions formed therefrom. Other embodiments relate to films formed from such compositions and to devices, such as electrical, electronic and optoelectronic devices, that encompass such films.

Abstract: The present invention relates to a directly photoimageable polymer composition (DPPC) and methods for its use in forming microelectronic and optoelectronic devices. Such DPPC encompasses a polymer having at least one norbornene-type repeat unit having a pendant silyl containing radical and at least one norbornene-type repeat unit having an acrylate containing radical.

Abstract: A polymer comprising polycyclic repeating units having recurring ion conducting groups and optional crosslinkable groups is disclosed. The present invention provides the capability of tailoring polymers to impart unique properties to membranes fabricated from the polymers. Membranes comprising the polymers and methods for preparing the membranes and their use in ion conducting membranes, particularly in fuel cells, are also provided.

Abstract: The disclosed invention relates to novel norbornene-type monomers containing pendent lactone or sultone groups. The invention also relates to norbornene-type polymers and copolymers comprising one or more repeating units represented by the formula: and containing pendent lactone or sultone groups. These polymers and copolymers are useful in making photoimagable materials. The photoimagable materials are particularly suitable for use in photoresist compositions useful in 193 and 157 nm photolithography.

Abstract: Embodiments in accordance with the present invention encompass photo-imageable compositions that include polymers of acrylate-type monomers and norbornene-type monomers. In some embodiments a catalyst system comprising a cationic or a neutral Pd(II) dimer component having the formula (Allyl)Pd(P(R21)3) or (L?)[(L)Pd(R)(X)]2, respectively is employed to effect polymerization. In other embodiments a free radical or living free radical catalyst is employed to effect polymerization. At least one of the acrylate-type monomers and norbornene-type monomers of the polymer embodiments of the present invention encompass an acid labile moiety. Some polymer embodiments of the present invention include more than one type of acrylate-type monomer and norbornene-type monomer. Embodiments of the present invention include forming a patterned layer on a substrate and some embodiments include transferring the patterned structure to a material layer first formed on the substrate.

Abstract: Polycyclic addition polymers derived from norbornene-type monomers are mixed with a variety of other polymers to generate families of new blends, alloys, and block copolymers.

Abstract: A method for gettering metallic impurities from a semiconductor substrate (25). A gettering structure is fabricated in inactive areas of a semiconductor chip (31). The gettering structure is manufactured by forming an oxide (30) having a bird's head structure contacting a heavily doped region (28). The combination creates precipitation nuclei to which the metallic impurities migrate. The metallic impurities are sequestered by the precipitation nuclei or trap sites and rendered incapable of degrading the electrical characteristics of a semiconductor device.

Abstract: A method for stopping a polish planarization wherein an etch-stop layer (13, 21, 31) is formed. The etch-stop layer (13, 21, 31) may be formed on a substrate (11) or on a conductive layer (12). The etch-stop layer (13, 21, 31) includes a metal and a grit material (17, 25, 35) such as a diamond powder. The etch-stop layer (13, 21, 31) serves as a stop to a mechanical polishing apparatus. The mechanical polishing apparatus removes a planarization layer (14, 22, 33) by polishing, but is unable to remove the etch-stop layer (13, 21, 31) because the etch-stop layer is able to withstand a polishing action of the mechanical polishing apparatus. The etch-stop layer (13, 21, 31) provides protection for the metal from mechanical damage during polish planarization and allows formation of a planar surface.

Abstract: A method and an electrically conductive interconnect structure (30) for controlling electromigration. The electrically conductive interconnect structure (30) comprises a groove (33) adjacent an electrically conductive interconnect (39). The electrically conductive interconnect (39) is patterned from a deposited layer of conductive material which contains global grain microstructures. Moreover, the electrically conductive interconnect (39) is patterned to have polycrystalline and single-grain segment lengths that are less than a length at which an electromigration flux fails to overcome a gradient-driven counter flux in a line segment. The groove (33) controls the polycrystalline and single-grain segment lengths to be less than the critical length, thereby reducing electromigration.

Abstract: A method for automated artwork building which comprises determining a desired die pad pitch, assigning inner lead bonding positions for each lead based on the average die pitch. The desired outer lead bonding position is then determined for each lead. The allowable range of fan in and fan out angles for each lead is computed according to design and manufacturing constraints. An electrical cost function is formulated based on signal lead crosstalk and ground lead simultaneous switching noise. Each lead is then routed. The routing is repeated for each lead for each allowable combination of fan in and fan out angles. Finally the optimal routing is selected based on electrical characteristics.