Abstract: A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.

Abstract: A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid. The patterned layer is removed. An optical pattern of a second alignment grid aligned over the etched first alignment grid is measured. The optical pattern is used to determine whether the second alignment grid is aligned over the etched first alignment grid.

Abstract: The invention provides a radio frequency unit including a box-shaped chassis into which an insulating board loaded with electronic components is housed, and two connectors attached to a front plate of the chassis with a space therebetween. A supporting member protruding into the chassis is provided in a position between the two connectors in the front plate. The supporting member has a flat plate portion that is bent at right angles from an end face of the front plate, and extends parallel to the insulating board, and a pair of tongue pieces that are formed so as to be bent towards the inside of the chassis from both side ends of the flat plate portion. The pair of tongue pieces are located in a cutout portion provided in the insulating board, and the tongue pieces are soldered to a grounding pattern provided in the insulating board.