Abstract: A packet based display interface arranged to couple a multimedia source device to a multimedia sink device is disclosed that includes a transmitter unit coupled to the source device arranged to receive a source packet data stream in accordance with a native stream rate, a receiver unit coupled to the sink device, and a linking unit coupling the transmitter unit and the receiver unit arranged to transfer a multimedia data packet stream formed of a number of multimedia data packets based upon the source packet data stream in accordance with a link rate between the transmitter unit and the receiver unit.

Abstract: The present invention is in the field of virtualization of Network Interface Cards and Controllers (NIC) that connect to for example a host computer that can have multiple functions and OS's (referred to as guest functions and guest-OS's) running on it simultaneously and, in particular, relates to the virtualization of the operation of a single NIC such that it can be used simultaneously by multiple guests in such a manner that memory references due to the network traffic originating from and destined to a particular guest is kept separate from other network traffic, and that allows the Media Access Controller (MAC) within the NIC to operate such that it only accepts network packets that are destined to one of the guest-functions or guest-OS's, and the MAC is not required to operate in promiscuous mode where it accept all incoming packets in order to implement the virtualization features.

Abstract: Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically conductive pathways and electronic devices. The metal layers are stacked on top of each other such that the dielectric layers separate the adjacent conductive layers. The electronic devices may be passive devices such as resistors. The resistors are formed by depositing metal onto the dielectric layer and then implanting the metal with oxygen. The conductive layer may be formed of materials such as copper and aluminum.

Abstract: Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate with a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum is formed on the first barrier layer. A copper seed layer is formed on the second barrier layer and implanted with barrier ions and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization.