Abstract: The present invention is directed to a method of fabricating a local interconnect. A disclosed method involves forming two separate cavities in the ILD above two electrical contacts of a transistor. A first cavity extend down to an underlying etch stop layer. The first cavity is then filled with a protective layer. The second cavity is then formed adjacent to the first cavity and extends down to expose the underlying etch stop layer. The protective layer is removed to form an expanded cavity including the first and second cavities which expose the underlying etch stop layer in the expanded cavity. The etch stop material in the expanded cavity is also removed to expose an underlying gate contact and expose one of a source or drain contact. The gate contact is then electrically connected with one of the exposed source or drain contacts to form a local interconnect.

Abstract: The present invention is directed toward systems, packages, and methods for providing improved thermal performance in such packages and systems. Embodiments of the invention include a semiconductor integrated circuit (IC) package having a substrate with a heat spreader mounted on the substrate. An IC die is mounted to the heat spreader such that the heat spreader lies in between the die and the substrate. The invention is also directed to a heat spreader plate useable in a semiconductor package. The heat spreader plate comprises a plate comprised of thermally conductive material suitable for attachment to a packaging substrate wherein the plate includes openings for exposing electrical bonding surfaces of a packaging substrate when the heater spreader plate is mounted on the packaging substrate. Such openings enable wirebonding between the exposed electrical bonding surfaces of the substrate and an integrated circuit die to complete construction of a package including the heatspreader.