Abstract: An ultrasonic motor includes a driven object, a piezoelectric element for driving the driven object, a vibration plate including a notch having an inner peripheral surface of an arc-shaped form having a central angle larger than 180 degrees and being vibrated by the piezoelectric element, and a contact portion made of a material different from that of the vibration plate, having a portion overlapping the piezoelectric element in a plan view and being smaller in thickness than the piezoelectric element, attached to the notch of the vibration plate by press fitting or forced fitting and being in contact with the driven object. Thereby, the ultrasonic motor can have a high shock resistance and a high wear resistance, and can be driven with high efficiency.

Abstract: A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1-xN layer on the first electrode layer, forming on the first InxGa1-xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.

Abstract: In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGaAs second upper cladding layer (109), p-GaAs etching stop layer (110), p-AlGaAs third upper cladding layer (111), p-GaAs contact layer (112) and p+-GaAs contact layer (113)) is formed. The p-side electrode (114) has one or a plurality of high refractive index layers and low refractive index layers formed successively from the side put in contact with the surface of the semiconductor layer group of the second conductive type. The high refractive index layers have a refractive index of not lower than 2.5 with respect to the wavelength band of the emission laser light and a total thickness of not greater than 75 nm, while the low refractive index layers have a refractive index of not higher than 1.0 with respect to the wavelength band of the emission laser light.

Abstract: An automatically marking, reading and distinguishing apparatus, which programmingly controls a conveyance of a printed circuit board, includes a table, an information label generator, at least one flipping device, and an image reading and distinguishing device. The table includes a first area and a second area. The information label generator is disposed corresponding to the first area for generating and labeling an information label on the printed circuit board. The image reading and distinguishing device is disposed corresponding to the second area to determine whether the information label is readable. The flipping device is located under the table and has a rotating part and at least one set of jigs for flipping the labeled or readable printed circuit boards.

Abstract: A cable supporting structure for facilitating the operation of mounting a cable to a boat. The cable includes a cable inner, a cable outer for surrounding the cable inner, and a stepped portion provided on the cable outer. The cable supporting structure includes a bracket mounted to the boat and having a U-shaped groove for storing the cable outer. The U-shaped groove of the bracket extends horizontally or obliquely downward toward the inner side. A holder including U-shaped grooves that fit the stepped portions of the cable for clamping the cable outer is mounted to the bracket.

Abstract: Disclosed is a conductive masterbatch comprising a polyamide and conductive carbon black, the conductive carbon black being present in the form of at least one agglomerated particle having a major axis of 20 to 100 ?m, wherein the number of the agglomerated particle(s) is 1 to 100 as observed under an optical microscope with respect to a contiguous area of 3 mm2.