Abstract: A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-substrate variations during sequential depositions. A suitable barrier includes a preheat ring extension that mates with an extension of the susceptor support.
Type:
Grant
Filed:
June 7, 1995
Date of Patent:
November 19, 1996
Assignee:
Applied Materials, Inc.
Inventors:
Israel Beinglass, Mahalingam Venkatesan, Christian M. Gronet