Patents Represented by Attorney, Agent or Law Firm Birgit M. Morris
  • Deposition of TEOS oxide using pulsed RF plasma
    Patent number: 6451390
    Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: September 17, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Haruhiro H. Goto, Takako Takehara, Carl A. Sorensen, William R. Harshbarger, Kam S. Law