Abstract: A method of etching high aspect ratio, anisotropic deep trench openings in a silicon substrate coated with a multilayer mask comprising in sequence a pad oxide layer, a silicon nitride layer, a doped or undoped silicon oxide hard mask layer, a polysilicon hard mask layer, an antireflection coating and a patterned photoresist layer in a single chamber comprising patterning the antireflection coating and hard mask layer, removing the photoresist and antireflection layers with oxygen, using the patterned polysilicon as a hard mask layer etching an opening in the silicon oxide hard mask layer, the silicon nitride layer and the pad oxide layer, removing the polysilicon hard mask layer with CF4/CHF3, and etching an anisotropic deep trench in the silicon substrate using the patterned silicon oxide hard mask layer as a mask and an etchant mixture including nitrogen trifluoride that self-cleans the chamber.

Abstract: Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at the surface of the chuck, and an optical pyrometer connected to a second end of the cable. The optical pyrometer measures the temperature of a wafer during processing and measures in situ temperature of plasma-excited cleaning gas introduced into the chamber during subsequent cleaning from walls thereof of unwanted solid deposits within the chamber. The pyrometer is connected to a computer which controls the flow of cleaning gases. When the temperature of the plasma-excited gas reaches a steady-state value the computer stops the flow of cleaning gases into the chamber and thereby stops the cleaning operation.

Abstract: The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two electrical power sources of different frequencies. A reaction gas is admitted into the deposition chamber and subjected to the plasma. The reaction gas is a mixture of tetraethylorthosilicate and a halogen gas, such as a gas of fluorine, chlorine or bromine. The reaction gas is reacted by the plasma to cause the material of the gas to deposit on the body which is within the chamber. This results in a deposited layer having a smoothly tapered surface even when the surface of the body possesses valleys and mesas, and thus prevents the formation of voids.

Abstract: A process for etching a pattern-masked conductor substrate anisotropically so as to obtain very high etch rates comprising adding a polymer-forming fluorocarbon gas and an etch gas at high flow rates to an etch chamber at etching pressures of 77 millitorr to 100 Torr using a high source power and bias power to the substrate support electrode to form a high density plasma. The gases can be added together, sequentially or alternately.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

Abstract: A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a high power RF source connected to a coil in the deposition chamber to couple energy into the plasma. A high power RF bias is applied to the substrate, and a low power DC bias is applied to the sputtering target. The same parameters are repeated in a second step except that the high power RF bias on the substrate support is either reduced to a low power level or reduced to zero (by the end of the second step) to deposit on the lowest quarter of the sidewall of the opening. In a third step, no RF bias is applied to the pedestal remains and the pressure is reduced to a medium pressure state, resulting in a deposition on the second quarter of the sidewall of the opening.

Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

Abstract: A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of one or more hydrogen-containing gases, preferably one or more hydrofluorocarbon gases, to one or more fluorine-substituted hydrocarbon etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface. In a preferred embodiment, one or more oxygen-bearing gases are also added to reduce the overall rate of polymer deposition on the chamber surfaces and on the surfaces to be etched, which can otherwise reduce the etch rate and cause excessive polymer deposition on the chamber surfaces. The fluorine scavenger is preferably an electrically grounded silicon electrode associated with the plasma.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.

Abstract: An etchant mixture of carbon tetrafluoride and argon in a plasma etch chamber produces straight walled isolation trenches in a silicon nitride layer, the trenches having rounded bottoms and no microtrenching.

Abstract: A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second step, an etch composition of a fluorine-containing gas such as SF.sub.6, HBr and oxygen is used, producing more vertical openings at a high etch rate. The taper of the openings during the second step can be controlled by adjusting the relative amount of HBr or SF.sub.6 employed. This process is a clean process that does not require cleaning of the etch chamber between etch steps.

Abstract: An etchant composition for etching straight walled, tapered trenches in silicon comprising chlorine, nitrogen and a mixture of helium and oxygen. The resultant trenches can be readily filled with a dielectric material without the formation of voids. The etchant of the invention is less corrosive, and thus provides increased chamber life and reduced costs over hydrogen bromide-containing etchants.

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Abstract: A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

Abstract: An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.

Abstract: Disclosed is a system, including both method and apparatus, for enhancing the plasma etching of a semiconductor wafer. The system enhances etchant uniformity while greatly reducing plasma contamination. Etching is performed in a housing for processing a semiconductor wafer having a wafer perimeter defined by an outer wafer edge, a top surface and a bottom surface. The plasma etch technique includes a plasma positioned substantially coplanar with and proximate,to the semiconductor wafer. The plasma has a perimeter defined by an outer plasma edge and extending beyond substantially all of the wafer perimeter. Provided is a means for introducing an inert gas between the wafer perimeter and the plasma perimeter so the inert gas may or may not hit the wafer's bottom surface. Plasma and wafer can each have a circular shape where the plasma and the wafer are proximate to each other.