Patents Represented by Law Firm Blakely, Sokoloff, Tayslor & Zafman LLP
  • Method for patterning polysilicon gate layer based on a photodefinable hard mask process
    Patent number: 6133128
    Abstract: A process for patterning a gate of a semiconductor device is provided. A gate material layer is formed upon an oxide layer of a substrate. A photoresist layer is formed upon the gate material layer. A portion of the photoresist layer is photo-oxidized. The portion defines a gate pattern. The portion of the photoresist layer is converted into a hard mask. A portion of the gate material layer is patterned with the hard mask. The portion of the gate material layer defines a gate.
    Type: Grant
    Filed: December 30, 1997
    Date of Patent: October 17, 2000
    Assignee: Intel Corporation
    Inventors: Siddhartha Das, Chunlin Liang