Patents Represented by Attorney Boi-In Lin
  • Patent number: 7554154
    Abstract: This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: June 30, 2009
    Assignee: Alpha Omega Semiconductor, Ltd.
    Inventor: François Hébert