Abstract: A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.

Abstract: A solar panel has a face which can be directed towards the sun for generating heat or electricity. The solar panel face is protected by a polymeric coating. The polymeric coating includes a polyimide polymer made by reacting at least one acid monomer with at least one diamine monomer to form the polyimide polymer backbone. The monomers are selected such that the polyimide backbone includes at least one non-terminal attachment point. An oligomeric silsesquioxane compound is attached to the polyimide backbone by reacting a functional group to the attachment point, where the functional group is connected to the oligomeric silsesquioxane compound. The polymeric compound can provide a relatively lightweight protective layer for the solar panel, which can reduce the total weight of the solar panel.