Abstract: A semiconductor processing method includes providing a substrate, forming a plurality of semiconductor layers in the substrate, each of the semiconductor layers being distinct and selected from different groups of semiconductor element types. The semiconductor layers include a first, second, and third semiconductor layers. The method further includes forming a plurality of lateral void gap isolation regions for isolating portions of each of the semiconductor layers from portions of the other semiconductor layers.
Type:
Grant
Filed:
October 19, 2005
Date of Patent:
February 26, 2008
Assignee:
International Business Machines Corporation
Inventors:
Howard Hao Chen, Louis Lu-Chen Hsu, Jack Allan Mandelman