Abstract: Methods are disclosed by which the effects of a defective electromechanical pixel (20) having a beam (30) and a hinge (34,36) are mitigated. These methods may damage the hinge (34,36) or the beam (30) and comprise the step of applying a voltage sufficient to damage the hinge (34,36) or beam (30) of said electromechanical pixel (20) by mechanical overstress, thermal overstress, electrochemical reaction, or thermally induced chemical reaction. Other methods are also disclosed.

Abstract: A preferred embodiment of the present invention provides a method of addressing a digital micromirror device (DMD) having an array of electromechanical pixels (20) comprising deflectable beams (30) wherein each of the pixels (20) assume one of two or more selected stable states according to a set of selective address voltages. A first step of the preferred method is electromechanically latching, by applying a bias voltage with an AC and a DC component to the array of pixels (20), each of the pixels (20) in one of the selected stable states. A second step is applying a new set of selective address voltages to all the pixels (20) in the array. A third step is electromechanically unlatching, by removing the bias voltage from the array, the pixels (20) from their previously addressed state. A fourth step is allowing the array of pixels (20) to assume a new state in accordance with the new set of selective address voltages.

Abstract: A transponder (14) for communicating with an interrogator (12) has a high Q-factor resonant circuit (34) of frequency f.sub.1 for receiving RF powering signals. The transponder also has a tuning circuit (56,58) which when in electrical communication with the resonant circuit (34) is operable to form a lower Q-factor resonant circuit (60) of frequency f.sub.3 for receiving RF communications from the interrogator unit. The transponder also includes a demodulator (66) which is in electrical communication with said resonant circuit (34). Additionally, the transponder (14) also included a control circuit (40) which receives a demodulated data signal from the demodulator (66). The control circuit (40) is further connected to the tuning circuit (56,58) and is operable to connect the tuning circuit (56,58) to the high Q-factor resonant circuit (34) in order to form the lower Q-factor resonant circuit (60). Control circuit (40) also converts the RF powering signals to a DC current for storing energy.

Abstract: A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34).

Abstract: A method of communicating between an interrogator (10) and at least a first and second transponder (12). The transponders (12) are separately located within a first and a second vehicle (20) travelling within a first and a second traffic lane, respectively. The method has the steps of providing a first and a second LF antenna (16) associated with and proximity to a first and a second traffic lane, respectively. From each of the first and second LF antennas (16) a continuous LF subcarrier is transmitted to serve as a clock signal for each antenna's associated transponder (12). Initially, a wake-up signal is sent by each of the LF antennas (16) to its associated transponder (12). Following the wake-up signal, a unique lane code is sent by each of the LF antennas (16) to its associated transponder (12). The transponder (12) stores its unique lane code in its memory (70).

Abstract: A method of communicating between a transponder and an interrogator. The interrogator (10) transmits a wireless RF interrogation which is received by the transponder (12). The transponder (12) then transmits a wireless RF response. The wireless RF response has a first channel response centered at frequency FDX1=RF+SC, a second channel response centered at frequency FDX2=RF-SC, and a third channel response centered at frequency FDX3=SC. The third channel response is a spurious signal resulting from using a non-linear element (32) as the transponder modulator (32,34). The interrogator (10) receives this wireless RF response. The response is received in the three channels with a first circuit (82) operable to receive said first channel response, a second circuit (86) is operable to receive said second channel response, and a third circuit (86,88) is operable to receive said third channel response.

Abstract: A method for forming a storage capacitor (12) including the step of forming a storage node contact window (38) and forming a cavity (48) in the storage electrode (50) such that the capacitive area includes the sidewalls of the storage electrode and the cavity in the storage electrode. The capacitor is completed by forming a dielectric layer (54) over the storage electrode (50) and forming a conductive layer (56) over the dielectric layer (54) to act as a plate electrode capacitively-coupled to the storage electrode (50) through the dielectric layer (54). Other devices, systems and methods are also disclosed.

Abstract: A method for multiple phase light modulation, said method comprising providing a pixel (20) having at least two modulating elements (22),(24). The method further comprising addressing said at least two modulating elements (22), (24) whereby light incident on said addressed element undergoes discrete phase changes between addressable states. The method further comprises resolving light from said at least two modulating elements (22), (24), into a response having at least three unique phases. Other devices, systems and methods are also disclosed.

Abstract: Methods are disclosed by which the effects of a defective electromechanical pixel (20) having a beam (30) and a hinge (34,36) are mitigated. These methods may damage the hinge (34,36) or the beam (30) and comprise the step of applying a voltage sufficient to damage the hinge (34,36) or beam (30) of said electromechanical pixel (20) by mechanical overstress, thermal overstress, electrochemical reaction, or thermally induced chemical reaction. Other methods are also disclosed.

Abstract: A transponder (14) for communicating with an interrogator (12) has a high Q-factor resonant circuit (34) of frequency f.sub.1 for receiving RF powering signals. The transponder also has a tuning circuit (56,58) which when in electrical communication with the resonant circuit (34) is operable to form a lower Q-factor resonant circuit (60) of frequency f.sub.3 for receiving RF communications from the interrogator unit. The transponder also includes a demodulator (66) which is in electrical communication with said resonant circuit (34). Additionally, the transponder (14) also included a control circuit (40) which receives a demodulated data signal from the demodulator (66). The control circuit (40) is further connected to the tuning circuit (56,58) and is operable to connect the tuning circuit (56,58) to the high Q-factor resonant circuit (34) in order to form the lower Q-factor resonant circuit (60). Control circuit (40) also converts the RF powering signals to a DC current for storing energy.

Abstract: A preferred embodiment of the present invention provides a method of addressing a digital micromirror device (DMD) having an array of electromechanical pixels (20) comprising deflectable beams (30) wherein each of the pixels (20) assume one of two or more selected stable states according to a set of selective address voltages. A first step of the preferred method is electromechanically latching, by applying a bias voltage with an AC and a DC component to the array of pixels (20), each of the pixels (20) in one of the selected stable states. A second step is applying a new set of selective address voltages to all the pixels (20) in the array. A third step is electromechanically unlatching, by removing the bias voltage from the array, the pixels (20) from their previously addressed state. A fourth step is allowing the array of pixels (20) to assume a new state in accordance with the new set of selective address voltages.

Abstract: The bistable deformable mirror device (DMD) used in a high-definition television (HDTV) application must be capable of supporting at least 128 grey levels, using pulse-width modulation. If the DMD is line-updated, then the minimum field time to support 128 grey levels cannot be achieved because of the time required to perform a resonant reset once each line. This disclosure shows how the DMD can be field-updated in order to achieve the minimum required field time.

Abstract: An arithmetic or logical computation result detection circuit is described. The circuit has a set of one-bit-zero cells which receive a first operand, A, a second operand, B, and a C.sub.in, and generates a set of one-bit-zero signals, Z. A combinatorial circuit receives the set of one-bit-zero signals and provides a selected output which is a known function of the one-bit-zero signals. In a preferred embodiment, the combinatorial circuit is a logical AND function which detects a condition when all the one-bit-zero signals are positively asserted. In various embodiments of the preferred invention the one-bit-zero signals may be operable to detect an arithmetic zero condition for operations of addition, subtraction, or a logic operation. Other devices, systems and methods are also disclosed.

Abstract: A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34).

Abstract: A semiconductor wafer (32) is patterned to have gettering areas (36-38) selectively positioned proximate devices (44-46) which require gettering. The areas (36-38) comprise germanium-doped silicon having a germanium concentration of approximately 1.5%-2.0%. The germanium creates a lattice mismatch between the substrate (32) and an epitaxial layer (34) which is sufficient to produce defects capable of gettering contaminants. The gettering areas (36-38) may be formed by selective deposition, selective etching, ion-implantation or selective diffusion techniques.

Abstract: A deformable mirror device comprises a plurality of groups of colored mirrors responsive to electronic signals. Each group of mirrors is coated with a mixture of resist and dye thereby reflecting specified wavelengths of visible light. A process for manufacturing such a color deformable mirror device ("DMD") includes forming a layer of material on the DMD comprising a resist and a dye and selectively removing portions of the layer of material from the DMD.

Abstract: A resonant mirror is disclosed which comprises a deflectable mirror generally planar with the stop surface of a substrate. The mirror is suspended adjacent the top surface by at least two supporting elements. At least one supporting element is displaced from an edge of the mirror. The supporting elements, being collinear, define an axis of rotation about which the mirror may oscillate to steer incident light through an angle.

Abstract: In one described embodiment of the present invention, a method for manufacturing a sublithographic semiconductor feature is disclosed. This method comprises: depositing a feature material on a substrate (14); depositing and patterning a resist material (20) over said feature material; vertically, anisotropically etching said feature material to form a feature pattern (18) with substantially vertical sidewalls underlying said resist material pattern (20); isotropically etching said feature pattern (18) such that said feature pattern (18) sidewalls are undercut from beneath said resist material pattern (20) to form a reduced geometry feature (18) whereby said reduced geometry feature (18) has a geometry less than that of the overlying resist material pattern (20). Another described embodiment comprises an antifuse formed by the above method wherein the antifuse dielectric (24) is a nitride-oxide (N-O) layer.