Abstract: An elastic foam football 10 with lengthwise spiral grooves 20 increasing in width and depth towards the middle of the ball for improved handling.
Abstract: A thin film resistor is formed using sputtering to deposit a thin film of resistive material on an insulating surface. The sputter target is composed of constituents which are normally present in relatively large quantities in thin film resistors, such as chromium silicide and silicon carbide. The sputtered thin film material is formed into resistor regions. An insulating layer is deposited over the thin film material. Ions (e.g., boron ions) are then implanted into the thin film through the insulating layer. These implanted constituents have a significant effect on the temperature coefficient and sheet resistance of the thin film resistor. Ion implantation of these constituents enables more control over the characteristics of the thin film resistor as compared to prior art techniques not using ion implantation.
Type:
Grant
Filed:
August 12, 1987
Date of Patent:
July 26, 1988
Assignee:
Siliconix Incorporated
Inventors:
Lorimer K. Hill, Barry L. Chin, Richard A. Blanchard