Abstract: A method of forming integrated isolation regions and active regions includes first forming a plurality of dielectric layers upon a semiconductor substrate. Then, a patterned mask is applied to define portions of the dielectric layers that will remain to form isolation regions and to define portions of the dielectric layers that will be removed in an etch step to create voids to the surface of the semiconductor substrate. Subsequently, epitaxially growth is employed to form active regions within the voids that were previously formed. Transistors are then formed in and on the active regions and are subsequently interconnected to form an integrated circuit.