Patents Represented by Attorney, Agent or Law Firm Byron K. Wyche
  • Method of making a polycide interconnection layer having a silicide film formed on a polycrystal silicon for a semiconductor device
    Patent number: 6800911
    Abstract: A semiconductor device has a semiconductor substrate and a conductive layer formed above the semiconductor substrate. The conductive layer has a silicon film, a silicide film formed on the silicon film, and a high melting-point metal film formed on the silicide film. The silicon film has a non-doped layer, which does not contain impurities, and an impurity layer which is formed on the non-doped layer and contains impurities. The silicide film is formed on the impurity layer of the silicon film.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: October 5, 2004
    Assignee: United Microelectronics Corporation
    Inventor: Hirotomo Miura