Abstract: A circuit for generating temperature dependent current for compensating an electrical circuit comprises a resistor and a semiconductor junction having different temperature coefficients. A current applied to the semiconductor junction conditions it for conduction and related potentials are maintained across the resistor and the semiconductor junction. Means receiving a portion of the current in one of the resistor and semiconductor junction develops the temperature dependent current in response to the portion. The temperature dependent current is applied to the electrical circuit to effect the desired compensation. One embodiment of the present invention includes a band-gap reference potential generating circuit in which a semiconductor junction thereof receives the temperature dependent current. Other embodiments of the present invention are employed to develop currents that are dependent upon a temperature function raised to a power.

Abstract: A reference potential generating circuit, suitable for use as an extrapolated band-gap reference potential generator, includes first and second transistors operated at different emitter current densities wherein the difference between their base-emitter offset potentials is applied to a first resistor connected between their respective bases. That difference potential is scaled up across a second resistor to provide a component of the reference potential. Current proportional to the collector current flow in the second transistor is generated and applied to the second resistor, the collector current of the second transistor being only a fraction of the current flow in the second resistor whereby the value of the second resistor is reduced. This generated current can be the current flowing between the collector and emitter electrodes of a third transistor connected emitter-to-emitter and base-to-base with the second transistor, for example.