Patents Represented by Attorney C.T. Watts

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  • Deep diode devices and method and apparatus
    Patent number: 4091257
    Abstract: Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.
    Type: Grant
    Filed: November 19, 1976
    Date of Patent: May 23, 1978
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Harvey E. Cline