Abstract: A system and method to estimate the absolute coarse pose of a rigid body, and more specifically of an individual's head as captured by overhead wide-angle cameras, by integrating position and pose information. Position information ideally includes three-dimensional position information provided by range finders or derived from images captured by multiple cameras. The three-dimensional position information can additionally be employed to determine the anchored viewing ray for the object.
Type:
Grant
Filed:
October 10, 2003
Date of Patent:
February 26, 2008
Assignee:
International Business Machines Corporation
Inventors:
Lisa Marie Brown, Rudolf M. Bolle, Jonathan H. Connell, Arun Hampapur, Sharathchandra Pankanti, Andrew William Senior, Ying-Li Tian
Abstract: The object of the invention is to extract from a moving picture and display at least a portion of team play, especially in a field sport, that is considered to be important for detailed analysis, so that the teamwork involved is easily discerned.
Type:
Grant
Filed:
May 15, 2002
Date of Patent:
June 12, 2007
Assignee:
International Business Machines Corporation
Inventors:
Tomio Echigo, Ken Masumitsu, Takaaki Murao, Masayoshi Teraguchi
Abstract: A system and method wherein a master node 710 comprises, as its primary components, a protocol stack 715, a transceiver 720, a search scheduler 725, communication volume prediction means 730 and outside-channel, signal induced interference intensity measuring means 735. A slave node 750 comprises, as its primary components, a protocol stack 760, a transceiver 765 and a search routine 755. The signal induced interference intensity read by the signal induced interference intensity measuring means 735 is transmitted to the search scheduler 725. The search scheduler 725 then employs the signal induced interference intensity to determine the total amount of the resources that are to be allocated for a search.
Type:
Grant
Filed:
November 6, 2000
Date of Patent:
June 14, 2005
Assignee:
International Business Machines Corporation
Abstract: A method of forming a layer of oxide or oxynitride upon a substrate including first placing a substrate having an upper surface and a lower surface in a high vacuum chamber and then exposing the upper surface to a beam of atoms or molecules, or both, of oxygen or nitrogen or a combination of same at a temperature sufficient to form a reacted layer on the upper surface of said substrate wherein said layer has a chemical composition different from the chemical composition of said substrate. The reacted upper layer is then exposed simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or metal molecules selected from the group consisting of Al, Si, Zr, La, Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer in said layer.
Type:
Grant
Filed:
October 25, 1999
Date of Patent:
April 1, 2003
Assignee:
International Business Machines Corporation
Inventors:
Nestor A. Bojarczuk, Jr., Eduard A. Cartier, Supratik Guha
Abstract: An ATM protocol adapter designed to operate with high speed switching systems having a receive and transmit elements based upon pipeline structure insuring that each operation is performed in a limited period.
Type:
Grant
Filed:
February 4, 1998
Date of Patent:
November 27, 2001
Assignee:
International Business Machines Corporation
Inventors:
Ronald Luijten, Laurent Nicolas, Michel Poret
Abstract: The present invention is to provide a novel transparent type liquid crystal display having a high contrast and transmittance that does not depend on an open area ratio without reducing a response speed. More specifically, the transparent type liquid crystal display of the present invention comprises at least a pair of first and second substrates 1 and 2 and a liquid crystal layer 3 interposed between the first and second substrates 1 and 2. A plurality of first light transmission portions 4 are formed on the first substrate 1, and a plurality of second light transmission portions 5 are formed on the second substrate 2.
Type:
Grant
Filed:
March 8, 2000
Date of Patent:
September 18, 2001
Assignee:
International Business Machines Corporation
Abstract: A method is disclosed for forming an epitaxial layer of a semiconductor material over a metal structure disposed upon a surface of a semiconductor substrate, the metal being characterized by a negative Gibbs free energy for the formation of a compound of the metal and the semiconductor material. The method comprises the steps of: a) placing the substrate in a reactor vessel having a base pressure in the ultra high vacuum range, b) bringing the substrate to an elevated temperature, and c) flowing, over said substrate, a halogen-free precursor gas of molecules comprising the semiconductor material. Typically, the metal structure characterized by feature dimensions of less than 2.0 microns. Preferably, the metal is tungsten, the semiconductor material is silicon and the gas comprises a silane of the form SinH(2n+2), where n is a positive integer.
Type:
Grant
Filed:
October 13, 1998
Date of Patent:
April 3, 2001
Assignee:
International Business Machines Corporation
Inventors:
Fenton Read McFeely, Ismail Cevdet Noyan, John Jacob Yurkas