Patents Represented by Attorney Charles B. Brantley

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  • Method to avoid threshold voltage shift in thicker dielectric films
    Patent number: 7067442
    Abstract: A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited over the nonconducting region and over the active regions. Heat is applied to the integrated circuit causing the barrier layer to anneal.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: June 27, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Randhir P. S. Thakur, Ravi Iyer, Howard Rhodes