Patents Represented by Attorney, Agent or Law Firm Charles Nold
  • Process for growing epitaxial gallium nitride and composite wafers
    Patent number: 6563144
    Abstract: A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of &mgr;>400 cm2/Vs for an electron background concentration of 4×1017 cm−3.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: May 13, 2003
    Assignee: The Regents of the University of California
    Inventors: Eicke R. Weber, Sudhir G. Subramanya, Yihwan Kim, Joachim Kruger